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dc.contributor.authorAbdulkadir, O.
dc.contributor.authorNagamalai, D.
dc.date.accessioned2020-08-07T13:03:49Z
dc.date.available2020-08-07T13:03:49Z
dc.date.issued2013
dc.identifier10.1007/978-3-642-31552-7_31
dc.identifier.issn21945357 (ISSN); 9783642315510 (ISBN)
dc.identifier.urihttp://hdl.handle.net/20.500.12498/3177
dc.description.abstractIn this article, we investigated the positive effect of a-SiOx:H layer between Ag surface plasmon polaritons and the active layer of a thin film a- Si:H/μc-Si:H tandem solar cell by isolating the metal nano particles that are responsible of creating surface recombination centres on the top cell. We fabricated four identical a-Si:H/μc-Si:H tandem cells having different thickness of a-SiOx:H layer like 0, 10, 20 and 30 nm just before the Ag nano particle development, and measured J-V characteristics of each to find out an optimum a-SiOx:H insulating layer thickness. We showed that the overall efficiency of a tandem cell with Ag nano particles could be improved up to 8.65% compared with the one having no a-SiOx:H layer. The most promising layer thickness for a small area tandem cell was obtained around 20 nm with an overall efficiency of 16.19%. An improvement of 14.6% in short circuit current density (JSC) and 2.64% in open circuit voltage (Voc) was achieved. © 2013 Springer-Verlag.
dc.language.isoEnglish
dc.publisherSpringer Verlag
dc.source2nd International Conference on Advances in Computing and Information Technology, ACITY 2012
dc.titleEfficiency improvement of a-Si:H/μc-Si:H tandem solar cells by adding a-SiOx:H layer between Ag nano particles and the active layer
dc.typeConference Paper


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