Show simple item record

dc.contributor.authorAbdulkadir, O.
dc.contributor.authorNagamalai, D.
dc.identifier.issn21945357 (ISSN); 9783642315510 (ISBN)
dc.description.abstractIn this article, we investigated the positive effect of a-SiOx:H layer between Ag surface plasmon polaritons and the active layer of a thin film a- Si:H/μc-Si:H tandem solar cell by isolating the metal nano particles that are responsible of creating surface recombination centres on the top cell. We fabricated four identical a-Si:H/μc-Si:H tandem cells having different thickness of a-SiOx:H layer like 0, 10, 20 and 30 nm just before the Ag nano particle development, and measured J-V characteristics of each to find out an optimum a-SiOx:H insulating layer thickness. We showed that the overall efficiency of a tandem cell with Ag nano particles could be improved up to 8.65% compared with the one having no a-SiOx:H layer. The most promising layer thickness for a small area tandem cell was obtained around 20 nm with an overall efficiency of 16.19%. An improvement of 14.6% in short circuit current density (JSC) and 2.64% in open circuit voltage (Voc) was achieved. © 2013 Springer-Verlag.
dc.publisherSpringer Verlag
dc.source2nd International Conference on Advances in Computing and Information Technology, ACITY 2012
dc.titleEfficiency improvement of a-Si:H/μc-Si:H tandem solar cells by adding a-SiOx:H layer between Ag nano particles and the active layer
dc.typeConference Paper

Files in this item


There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record